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| NTB5405N Power MOSFET Features 40 V, 116 A, Single N-Channel, D2PAK * * * * Low RDS(on) High Current Capability Low Gate Charge These are Pb-Free Devices V(BR)DSS 40 V http://onsemi.com ID MAX (Note 1) 116 A Applications RDS(ON) TYP 4.9 m @ 10 V * Electronic Brake Systems * Electronic Power Steering * Bridge Circuits MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current - RqJC (Note 1) Power Dissipation - RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 20 116 82 150 280 -55 to 175 75 800 W A Units V V A N-Channel D G S tp = 10 ms MARKING DIAGRAM 1 2 3 D2PAK CASE 418B STYLE 2 NTB5405NG AYWW Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain-to Source Avalanche Energy - (VDD = 50 V, VGS = 10 V, IPK = 40 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A mJ TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 NTB5405N G A Y WW = Specific Device Code = Pb-Free Device = Assembly Location = Year = Work Week THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) (Note 1) Junction-to-Ambient (Note 2) Junction-to-Ambient (Note 3) Symbol RJC RJA RJA Max 1.0 45 62.5 Units C/W C/W C/W ORDERING INFORMATION Device NTB5405NG NTB5405NT4G Package D2PAK (Pb-Free) D2PAK (Pb-Free) 800 / Tape & Reel Shipping 50 Units / Rail 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2). 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 November, 2008 - Rev. 2 1 Publication Order Number: NTB5405N/D NTB5405N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 20 A TJ = 25C TJ = 100C VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 W VGS = 10 V, VDD = 32 V, ID = 40 A, RG = 2.5 W VGS = 10 V, VDS = 32 V, ID = 40 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V VGS = 10 V, ID = 40 A VGS = 5.0 V, ID = 15 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge 2700 700 300 88 3.25 9.5 37 4000 1400 600 nC pF VGS = 10 V, ID = 15 A VGS = 0 V, VDS = 40 V TJ = 25C TJ = 100C VGS = 0 V, ID = 250 mA 40 39 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 30 V VGS = VDS, ID = 250 mA 1.5 -7.0 4.9 7.0 32 3.5 V mV/C 5.8 8.0 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 8.5 52 55 70 ns SWITCHING CHARACTERISTICS, VGS = 5 V (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 19 153 32 42 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 20 A 0.82 TBD 66 35 31 113 nC ns 1.1 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 4. Pulse Test: pulse width 300 ms, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTB5405N TYPICAL PERFORMANCE CURVES 200 ID, DRAIN CURRENT (AMPS) 175 150 125 100 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4V 3.5 V 4.5 V VGS = 6 V to 10 V TJ = 25C 5.5 V 5V ID, DRAIN CURRENT (AMPS) 125 VDS 10 V 100 75 50 25 0 TJ = 125C TJ = 25C TJ = -55C 0 3 4 5 1 2 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.01 ID = 40 A TJ = 25C 0.01 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 15 25 Figure 2. Transfer Characteristics TJ = 25C 0.009 0.008 0.007 VGS = 5 V 0.006 0.005 VGS = 10 V 0.004 0.003 3 4 5 6 7 8 9 10 35 45 55 65 75 85 95 105 115 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 100000 ID = 40 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 175C 1000 TJ = 100C 100 10 10 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTB5405N TYPICAL PERFORMANCE CURVES 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 10 Crss VGS 0 VDS 10 20 30 40 Coss Crss Ciss VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V Ciss TJ = 25C 12 10 8 6 QGS 4 2 0 0 10 ID = 40 A TJ = 25C 50 70 20 30 40 60 QG, TOTAL GATE CHARGE (nC) 80 QGD VDS QT VGS 36 30 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 24 18 12 6 0 90 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 40 A VGS = 10 V t, TIME (ns) 100 tf td(off) tr td(on) 40 35 30 25 20 15 10 5 0 0.4 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.5 0.7 0.6 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 1 ms ID, DRAIN CURRENT (A) 100 10 ms dc 10 VGS = 20 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 ms 10 ms AVALANCHE ENERGY (mJ) 800 700 600 500 400 300 200 100 Figure 10. Diode Forward Voltage vs. Current ID = 40 A 1 0.1 0 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTB5405N TYPICAL PERFORMANCE CURVES 100 D = 0.5 10 1 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 Surface-Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.1 1 10 100 1000 0.2 0.1 0.05 0.02 0.01 r(t), (C/W) t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 NTB5405N PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE K C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 3.504 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS 2X 2X *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB5405N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTB5405N/D |
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